SISHA10DN-T1-GE3 by Vishay Intertech – Specifications

Vishay Intertech SISHA10DN-T1-GE3 is a SISHA10DN-T1-GE3 from Vishay Intertech, part of the MOSFETs. It is designed for 30V 3.7mΩ@10A,10V 2.2V@250uA 1PCSNChannel PowerPAK1212-8SH MOSFETs ROHS. This product comes in a PowerPAK1212-8SH package and is sold as Tape & Reel (TR). Key features include:

• Drain Source Voltage (Vdss): 30V
• Continuous Drain Current (Id): 25A;30A
• Drain Source On Resistance (RDS(on)@Vgs,Id): 3.7mΩ@10A,10V
• Power Dissipation (Pd): 3.6W;39W
• Gate Threshold Voltage (Vgs(th)@Id): 2.2V@250uA
• Type: 1PCSNChannel
• Input Capacitance (Ciss@Vds): 2.425nF@15V
• Total Gate Charge (Qg@Vgs): 51nC@10V
• Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.