SISS02DN-T1-GE3 by Vishay Intertech – Specifications

Vishay Intertech SISS02DN-T1-GE3 is a SISS02DN-T1-GE3 from Vishay Intertech, part of the MOSFETs. It is designed for 25V 1.2mΩ@15A,10V 2.2V@250uA 1PCSNChannel - MOSFETs ROHS. This product comes in a - package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 25V
  • Continuous Drain Current (Id): 51A;80A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 1.2mΩ@15A,10V
  • Power Dissipation (Pd): 5W;65.7W
  • Gate Threshold Voltage (Vgs(th)@Id): 2.2V@250uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 4.45nF@10V
  • Total Gate Charge (Qg@Vgs): 83nC@10V
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

More on SISS02DN-T1-GE3

Full Specifications of SISS02DN-T1-GE3

Model NumberSISS02DN-T1-GE3
Model NameVishay Intertech SISS02DN-T1-GE3
CategoryMOSFETs
BrandVishay Intertech
Description25V 1.2mΩ@15A,10V 2.2V@250uA 1PCSNChannel - MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / Case-
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)25V
Continuous Drain Current (Id)51A;80A
Drain Source On Resistance (RDS(on)@Vgs,Id)1.2mΩ@15A,10V
Power Dissipation (Pd)5W;65.7W
Gate Threshold Voltage (Vgs(th)@Id)2.2V@250uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)4.45nF@10V
Total Gate Charge (Qg@Vgs)83nC@10V
Operating Temperature-55℃~+150℃@(Tj)

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