SISS08DN-T1-GE3 by Vishay Intertech – Specifications

Vishay Intertech SISS08DN-T1-GE3 is a SISS08DN-T1-GE3 from Vishay Intertech, part of the MOSFETs. It is designed for 25V 1.23mΩ@15A,10V 2.2V@250uA 1PCSNChannel PowerPAK1212-8S MOSFETs ROHS. This product comes in a PowerPAK1212-8S package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 25V
  • Continuous Drain Current (Id): 53.9A;195.5A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 1.23mΩ@15A,10V
  • Power Dissipation (Pd): 5W;65.7W
  • Gate Threshold Voltage (Vgs(th)@Id): 2.2V@250uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): [email protected]
  • Total Gate Charge (Qg@Vgs): 82nC@10V
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

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Full Specifications of SISS08DN-T1-GE3

Model NumberSISS08DN-T1-GE3
Model NameVishay Intertech SISS08DN-T1-GE3
CategoryMOSFETs
BrandVishay Intertech
Description25V 1.23mΩ@15A,10V 2.2V@250uA 1PCSNChannel PowerPAK1212-8S MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CasePowerPAK1212-8S
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)25V
Continuous Drain Current (Id)53.9A;195.5A
Drain Source On Resistance (RDS(on)@Vgs,Id)1.23mΩ@15A,10V
Power Dissipation (Pd)5W;65.7W
Gate Threshold Voltage (Vgs(th)@Id)2.2V@250uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)[email protected]
Total Gate Charge (Qg@Vgs)82nC@10V
Operating Temperature-55℃~+150℃@(Tj)

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