SISS10ADN-T1-GE3 by Vishay Intertech – Specifications

Vishay Intertech SISS10ADN-T1-GE3 is a SISS10ADN-T1-GE3 from Vishay Intertech, part of the MOSFETs. It is designed for 40V 2.65mΩ@15A,10V 2.4V@250uA 1PCSNChannel - MOSFETs ROHS. This product comes in a - package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 40V
  • Continuous Drain Current (Id): 31.7A;109A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 2.65mΩ@15A,10V
  • Power Dissipation (Pd): 4.8W;56.8W
  • Gate Threshold Voltage (Vgs(th)@Id): 2.4V@250uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 3.03nF@20V
  • Total Gate Charge (Qg@Vgs): 61nC@10V
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.146 grams.

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Full Specifications of SISS10ADN-T1-GE3

Model NumberSISS10ADN-T1-GE3
Model NameVishay Intertech SISS10ADN-T1-GE3
CategoryMOSFETs
BrandVishay Intertech
Description40V 2.65mΩ@15A,10V 2.4V@250uA 1PCSNChannel - MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.146 grams / 0.00515 oz
Package / Case-
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)40V
Continuous Drain Current (Id)31.7A;109A
Drain Source On Resistance (RDS(on)@Vgs,Id)2.65mΩ@15A,10V
Power Dissipation (Pd)4.8W;56.8W
Gate Threshold Voltage (Vgs(th)@Id)2.4V@250uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)3.03nF@20V
Total Gate Charge (Qg@Vgs)61nC@10V
Operating Temperature-55℃~+150℃@(Tj)

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