SISS10DN-T1-GE3 by Vishay Intertech – Specifications

Vishay Intertech SISS10DN-T1-GE3 is a SISS10DN-T1-GE3 from Vishay Intertech, part of the MOSFETs. It is designed for 40V 60A 57W 2.65mΩ@15A,10V 2.4V@250uA 1PCSNChannel - MOSFETs ROHS. This product comes in a - package and is sold as Tape & Reel (TR). Key features include:

• Drain Source Voltage (Vdss): 40V
• Continuous Drain Current (Id): 60A
• Power Dissipation (Pd): 57W
• Drain Source On Resistance (RDS(on)@Vgs,Id): 2.65mΩ@15A,10V
• Gate Threshold Voltage (Vgs(th)@Id): 2.4V@250uA
• Type: 1PCSNChannel
• Input Capacitance (Ciss@Vds): 3.75nF@20V
• Total Gate Charge (Qg@Vgs): 75nC@10V
• Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.