SISS23DN-T1-GE3 by Vishay Intertech – Specifications

Vishay Intertech SISS23DN-T1-GE3 is a SISS23DN-T1-GE3 from Vishay Intertech, part of the MOSFETs. It is designed for 20V 50A 57W 4.5mΩ@4.5V,20A 900mV@250uA 1PCSPChannel PowerPAK1212-8S MOSFETs ROHS. This product comes in a PowerPAK1212-8S package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 20V
  • Continuous Drain Current (Id): 50A
  • Power Dissipation (Pd): 57W
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 4.5mΩ@4.5V,20A
  • Gate Threshold Voltage (Vgs(th)@Id): 900mV@250uA
  • Type: 1PCSPChannel

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.2 grams.

More on SISS23DN-T1-GE3

Full Specifications of SISS23DN-T1-GE3

Model NumberSISS23DN-T1-GE3
Model NameVishay Intertech SISS23DN-T1-GE3
CategoryMOSFETs
BrandVishay Intertech
Description20V 50A 57W 4.5mΩ@4.5V,20A 900mV@250uA 1PCSPChannel PowerPAK1212-8S MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.200 grams / 0.007055 oz
Package / CasePowerPAK1212-8S
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)20V
Continuous Drain Current (Id)50A
Power Dissipation (Pd)57W
Drain Source On Resistance (RDS(on)@Vgs,Id)4.5mΩ@4.5V,20A
Gate Threshold Voltage (Vgs(th)@Id)900mV@250uA
Type1PCSPChannel

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