SISS30ADN-T1-GE3 by Vishay Intertech – Specifications

Vishay Intertech SISS30ADN-T1-GE3 is a SISS30ADN-T1-GE3 from Vishay Intertech, part of the MOSFETs. It is designed for 80V 8.9mΩ@10A,10V 3.5V@250uA 1PCSNChannel PowerPAK1212-8S MOSFETs ROHS. This product comes in a PowerPAK1212-8S package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 80V
  • Continuous Drain Current (Id): 15.9A;54.7A
  • Power Dissipation (Pd): 4.8W;57W
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 8.9mΩ@10A,10V
  • Gate Threshold Voltage (Vgs(th)@Id): 3.5V@250uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 1.295nF@40V
  • Total Gate Charge (Qg@Vgs): 30nC@10V
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.29 grams.

More on SISS30ADN-T1-GE3

Full Specifications of SISS30ADN-T1-GE3

Model NumberSISS30ADN-T1-GE3
Model NameVishay Intertech SISS30ADN-T1-GE3
CategoryMOSFETs
BrandVishay Intertech
Description80V 8.9mΩ@10A,10V 3.5V@250uA 1PCSNChannel PowerPAK1212-8S MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.290 grams / 0.010229 oz
Package / CasePowerPAK1212-8S
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)80V
Continuous Drain Current (Id)15.9A;54.7A
Power Dissipation (Pd)4.8W;57W
Drain Source On Resistance (RDS(on)@Vgs,Id)8.9mΩ@10A,10V
Gate Threshold Voltage (Vgs(th)@Id)3.5V@250uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)1.295nF@40V
Total Gate Charge (Qg@Vgs)30nC@10V
Operating Temperature-55℃~+150℃@(Tj)

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