SISS32DN-T1-GE3 by Vishay Intertech – Specifications

Vishay Intertech SISS32DN-T1-GE3 is a SISS32DN-T1-GE3 from Vishay Intertech, part of the MOSFETs. It is designed for 80V 7.2mΩ@10A,10V 3.8V@250uA 1PCSNChannel - MOSFETs ROHS. This product comes in a - package and is sold as Tape & Reel (TR). Key features include:

• Drain Source Voltage (Vdss): 80V
• Continuous Drain Current (Id): 17.4A;63A
• Power Dissipation (Pd): 5W;65.7W
• Drain Source On Resistance (RDS(on)@Vgs,Id): 7.2mΩ@10A,10V
• Gate Threshold Voltage (Vgs(th)@Id): 3.8V@250uA
• Type: 1PCSNChannel
• Input Capacitance (Ciss@Vds): 1.93nF@40V
• Total Gate Charge (Qg@Vgs): 42nC@10V
• Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.