SISS40DN-T1-GE3 by Vishay Intertech – Specifications

Vishay Intertech SISS40DN-T1-GE3 is a SISS40DN-T1-GE3 from Vishay Intertech, part of the MOSFETs. It is designed for 100V 36.5A 3.7W 21mΩ@10V,10A 3.5V@250uA 1PCSNChannel PowerPAK1212-8S MOSFETs ROHS. This product comes in a PowerPAK1212-8S package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 100V
  • Continuous Drain Current (Id): 36.5A
  • Power Dissipation (Pd): 3.7W
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 21mΩ@10V,10A
  • Gate Threshold Voltage (Vgs(th)@Id): 3.5V@250uA
  • Type: 1PCSNChannel

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.062 grams.

More on SISS40DN-T1-GE3

Full Specifications of SISS40DN-T1-GE3

Model NumberSISS40DN-T1-GE3
Model NameVishay Intertech SISS40DN-T1-GE3
CategoryMOSFETs
BrandVishay Intertech
Description100V 36.5A 3.7W 21mΩ@10V,10A 3.5V@250uA 1PCSNChannel PowerPAK1212-8S MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.062 grams / 0.002187 oz
Package / CasePowerPAK1212-8S
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)100V
Continuous Drain Current (Id)36.5A
Power Dissipation (Pd)3.7W
Drain Source On Resistance (RDS(on)@Vgs,Id)21mΩ@10V,10A
Gate Threshold Voltage (Vgs(th)@Id)3.5V@250uA
Type1PCSNChannel

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