SISS5710DN-T1-GE3 by Vishay Intertech – Specifications

Vishay Intertech SISS5710DN-T1-GE3 is a SISS5710DN-T1-GE3 from Vishay Intertech, part of the MOSFETs. It is designed for 150V 31.5mΩ@10A,10V 4V@250uA 1PCSNChannel - MOSFETs ROHS. This product comes in a - package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 150V
  • Continuous Drain Current (Id): 7.2A;26.2A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 31.5mΩ@10A,10V
  • Power Dissipation (Pd): 4.1W;54.3W
  • Gate Threshold Voltage (Vgs(th)@Id): 4V@250uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 770pF@75V
  • Total Gate Charge (Qg@Vgs): 15nC@10V
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

More on SISS5710DN-T1-GE3

Full Specifications of SISS5710DN-T1-GE3

Model NumberSISS5710DN-T1-GE3
Model NameVishay Intertech SISS5710DN-T1-GE3
CategoryMOSFETs
BrandVishay Intertech
Description150V 31.5mΩ@10A,10V 4V@250uA 1PCSNChannel - MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / Case-
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)150V
Continuous Drain Current (Id)7.2A;26.2A
Drain Source On Resistance (RDS(on)@Vgs,Id)31.5mΩ@10A,10V
Power Dissipation (Pd)4.1W;54.3W
Gate Threshold Voltage (Vgs(th)@Id)4V@250uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)770pF@75V
Total Gate Charge (Qg@Vgs)15nC@10V
Operating Temperature-55℃~+150℃@(Tj)

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