SISS65DN-T1-GE3 by Vishay Intertech – Specifications

Vishay Intertech SISS65DN-T1-GE3 is a SISS65DN-T1-GE3 from Vishay Intertech, part of the MOSFETs. It is designed for 30V 4.6mΩ@15A,10V 2.3V@250uA 1PCSPChannel PowerPAK1212-8S MOSFETs ROHS. This product comes in a PowerPAK1212-8S package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 30V
  • Continuous Drain Current (Id): 25.9A;94A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 4.6mΩ@15A,10V
  • Power Dissipation (Pd): 5.1W;65.8W
  • Gate Threshold Voltage (Vgs(th)@Id): 2.3V@250uA
  • Type: 1PCSPChannel
  • Input Capacitance (Ciss@Vds): 4.93nF@15V
  • Total Gate Charge (Qg@Vgs): 138nC@10V
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

More on SISS65DN-T1-GE3

Full Specifications of SISS65DN-T1-GE3

Model NumberSISS65DN-T1-GE3
Model NameVishay Intertech SISS65DN-T1-GE3
CategoryMOSFETs
BrandVishay Intertech
Description30V 4.6mΩ@15A,10V 2.3V@250uA 1PCSPChannel PowerPAK1212-8S MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CasePowerPAK1212-8S
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)30V
Continuous Drain Current (Id)25.9A;94A
Drain Source On Resistance (RDS(on)@Vgs,Id)4.6mΩ@15A,10V
Power Dissipation (Pd)5.1W;65.8W
Gate Threshold Voltage (Vgs(th)@Id)2.3V@250uA
Type1PCSPChannel
Input Capacitance (Ciss@Vds)4.93nF@15V
Total Gate Charge (Qg@Vgs)138nC@10V
Operating Temperature-55℃~+150℃@(Tj)

Compare Vishay Intertech - SISS65DN-T1-GE3 With Other 200 Models

Related Models - SISS65DN-T1-GE3 Alternative

Scroll to Top