SISS67DN-T1-GE3 by Vishay Intertech – Specifications

Vishay Intertech SISS67DN-T1-GE3 is a SISS67DN-T1-GE3 from Vishay Intertech, part of the MOSFETs. It is designed for 30V 60A 5.5mΩ@15A,10V 65.8W 2.5V@250uA 1PCSPChannel - MOSFETs ROHS. This product comes in a - package and is sold as Tape & Reel (TR). Key features include:

• Drain Source Voltage (Vdss): 30V
• Continuous Drain Current (Id): 60A
• Drain Source On Resistance (RDS(on)@Vgs,Id): 5.5mΩ@15A,10V
• Power Dissipation (Pd): 65.8W
• Gate Threshold Voltage (Vgs(th)@Id): 2.5V@250uA
• Type: 1PCSPChannel
• Input Capacitance (Ciss@Vds): 4.38nF@15V
• Total Gate Charge (Qg@Vgs): 111nC@10V
• Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.