SISS70DN-T1-GE3 by Vishay Intertech – Specifications

Vishay Intertech SISS70DN-T1-GE3 is a SISS70DN-T1-GE3 from Vishay Intertech, part of the MOSFETs. It is designed for 125V 29.8mΩ@8.5A,10V 4.5V@250uA 1PCSNChannel PowerPAK1212-8S MOSFETs ROHS. This product comes in a PowerPAK1212-8S package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 125V
  • Continuous Drain Current (Id): 8.5A;31A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 29.8mΩ@8.5A,10V
  • Power Dissipation (Pd): 5.1W;65.8W
  • Gate Threshold Voltage (Vgs(th)@Id): 4.5V@250uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): [email protected]
  • Total Gate Charge (Qg@Vgs): 15.3nC@10V
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

More on SISS70DN-T1-GE3

Full Specifications of SISS70DN-T1-GE3

Model NumberSISS70DN-T1-GE3
Model NameVishay Intertech SISS70DN-T1-GE3
CategoryMOSFETs
BrandVishay Intertech
Description125V 29.8mΩ@8.5A,10V 4.5V@250uA 1PCSNChannel PowerPAK1212-8S MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CasePowerPAK1212-8S
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)125V
Continuous Drain Current (Id)8.5A;31A
Drain Source On Resistance (RDS(on)@Vgs,Id)29.8mΩ@8.5A,10V
Power Dissipation (Pd)5.1W;65.8W
Gate Threshold Voltage (Vgs(th)@Id)4.5V@250uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)[email protected]
Total Gate Charge (Qg@Vgs)15.3nC@10V
Operating Temperature-55℃~+150℃@(Tj)

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