SISS76LDN-T1-GE3 by Vishay Intertech – Specifications

Vishay Intertech SISS76LDN-T1-GE3 is a SISS76LDN-T1-GE3 from Vishay Intertech, part of the MOSFETs. It is designed for 70V 6.25mΩ@10A,4.5V 1.6V@250uA 1PCSNChannel PowerPAK1212-8SH MOSFETs ROHS. This product comes in a PowerPAK1212-8SH package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 70V
  • Continuous Drain Current (Id): 19.6A;67.4A
  • Power Dissipation (Pd): 4.8W;57W
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 6.25mΩ@10A,4.5V
  • Gate Threshold Voltage (Vgs(th)@Id): 1.6V@250uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 2.78nF@35V
  • Total Gate Charge (Qg@Vgs): [email protected]
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

More on SISS76LDN-T1-GE3

Full Specifications of SISS76LDN-T1-GE3

Model NumberSISS76LDN-T1-GE3
Model NameVishay Intertech SISS76LDN-T1-GE3
CategoryMOSFETs
BrandVishay Intertech
Description70V 6.25mΩ@10A,4.5V 1.6V@250uA 1PCSNChannel PowerPAK1212-8SH MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CasePowerPAK1212-8SH
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)70V
Continuous Drain Current (Id)19.6A;67.4A
Power Dissipation (Pd)4.8W;57W
Drain Source On Resistance (RDS(on)@Vgs,Id)6.25mΩ@10A,4.5V
Gate Threshold Voltage (Vgs(th)@Id)1.6V@250uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)2.78nF@35V
Total Gate Charge (Qg@Vgs)[email protected]
Operating Temperature-55℃~+150℃@(Tj)

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