SISS80DN-T1-GE3 by Vishay Intertech – Specifications

Vishay Intertech SISS80DN-T1-GE3 is a SISS80DN-T1-GE3 from Vishay Intertech, part of the MOSFETs. It is designed for 20V 0.92mΩ@10A,10V 1.5V@250uA 1PCSNChannel PowerPAK1212-8S MOSFETs ROHS. This product comes in a PowerPAK1212-8S package and is sold as Tape & Reel (TR). Key features include:

• Drain Source Voltage (Vdss): 20V
• Continuous Drain Current (Id): 58.3A;210A
• Drain Source On Resistance (RDS(on)@Vgs,Id): 0.92mΩ@10A,10V
• Power Dissipation (Pd): 5W;65W
• Gate Threshold Voltage (Vgs(th)@Id): 1.5V@250uA
• Type: 1PCSNChannel
• Input Capacitance (Ciss@Vds): 6.45nF@10V
• Total Gate Charge (Qg@Vgs): 122nC@10V
• Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.