SIZ250DT-T1-GE3 by Vishay Intertech – Specifications

Vishay Intertech SIZ250DT-T1-GE3 is a SIZ250DT-T1-GE3 from Vishay Intertech, part of the MOSFETs. It is designed for 60V 2.4V@250uA 2 N-Channel PowerPAIR-8(3.3x3.3) MOSFETs ROHS. This product comes in a PowerPAIR-8(3.3x3.3) package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 60V
  • Continuous Drain Current (Id): 14A;38A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 12.2mΩ@10A,10V;12.7mΩ@10A,10V
  • Gate Threshold Voltage (Vgs(th)@Id): 2.4V@250uA
  • Type: 2 N-Channel
  • Input Capacitance (Ciss@Vds): 840pF@30V;790pF@30V
  • Total Gate Charge (Qg@Vgs): 21nC@10V
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.29 grams.

Full Specifications of SIZ250DT-T1-GE3

Model NumberSIZ250DT-T1-GE3
Model NameVishay Intertech SIZ250DT-T1-GE3
CategoryMOSFETs
BrandVishay Intertech
Description60V 2.4V@250uA 2 N-Channel PowerPAIR-8(3.3x3.3) MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.290 grams / 0.010229 oz
Package / CasePowerPAIR-8(3.3x3.3)
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)60V
Continuous Drain Current (Id)14A;38A
Drain Source On Resistance (RDS(on)@Vgs,Id)12.2mΩ@10A,10V;12.7mΩ@10A,10V
Gate Threshold Voltage (Vgs(th)@Id)2.4V@250uA
Type2 N-Channel
Input Capacitance (Ciss@Vds)840pF@30V;790pF@30V
Total Gate Charge (Qg@Vgs)21nC@10V
Operating Temperature-55℃~+150℃@(Tj)

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