SIZ256DT-T1-GE3 by Vishay Intertech – Specifications

Vishay Intertech SIZ256DT-T1-GE3 is a SIZ256DT-T1-GE3 from Vishay Intertech, part of the MOSFETs. It is designed for 70V 17.6mΩ@7A,4.5V 1.5V@250uA 2 N-Channel PowerPAIR-8(3.3x3.3) MOSFETs ROHS. This product comes in a PowerPAIR-8(3.3x3.3) package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 70V
  • Continuous Drain Current (Id): 11.5A;31.8A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 17.6mΩ@7A,4.5V
  • Gate Threshold Voltage (Vgs(th)@Id): 1.5V@250uA
  • Type: 2 N-Channel
  • Input Capacitance (Ciss@Vds): 1.06nF@35V
  • Total Gate Charge (Qg@Vgs): 27nC@10V
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

Full Specifications of SIZ256DT-T1-GE3

Model NumberSIZ256DT-T1-GE3
Model NameVishay Intertech SIZ256DT-T1-GE3
CategoryMOSFETs
BrandVishay Intertech
Description70V 17.6mΩ@7A,4.5V 1.5V@250uA 2 N-Channel PowerPAIR-8(3.3x3.3) MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CasePowerPAIR-8(3.3x3.3)
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)70V
Continuous Drain Current (Id)11.5A;31.8A
Drain Source On Resistance (RDS(on)@Vgs,Id)17.6mΩ@7A,4.5V
Gate Threshold Voltage (Vgs(th)@Id)1.5V@250uA
Type2 N-Channel
Input Capacitance (Ciss@Vds)1.06nF@35V
Total Gate Charge (Qg@Vgs)27nC@10V
Operating Temperature-55℃~+150℃@(Tj)

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