SIZ340BDT-T1-GE3 by Vishay Intertech – Specifications

Vishay Intertech SIZ340BDT-T1-GE3 is a SIZ340BDT-T1-GE3 from Vishay Intertech, part of the MOSFETs. It is designed for 30V 2.4V@250uA 2 N-Channel Power-33-8(3x3) MOSFETs ROHS. This product comes in a Power-33-8(3x3) package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 30V
  • Continuous Drain Current (Id): 16.9A;36A;25.3A;69.3A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 8.56mΩ@10A,10V;4.31mΩ@20A,10V
  • Gate Threshold Voltage (Vgs(th)@Id): 2.4V@250uA
  • Type: 2 N-Channel
  • Input Capacitance (Ciss@Vds): 550pF@15V;1.065nF@15V
  • Total Gate Charge (Qg@Vgs): 12.6nC@10V;23.5nC@10V
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.06 grams.

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Full Specifications of SIZ340BDT-T1-GE3

Model NumberSIZ340BDT-T1-GE3
Model NameVishay Intertech SIZ340BDT-T1-GE3
CategoryMOSFETs
BrandVishay Intertech
Description30V 2.4V@250uA 2 N-Channel Power-33-8(3x3) MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.060 grams / 0.002116 oz
Package / CasePower-33-8(3x3)
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)30V
Continuous Drain Current (Id)16.9A;36A;25.3A;69.3A
Drain Source On Resistance (RDS(on)@Vgs,Id)8.56mΩ@10A,10V;4.31mΩ@20A,10V
Gate Threshold Voltage (Vgs(th)@Id)2.4V@250uA
Type2 N-Channel
Input Capacitance (Ciss@Vds)550pF@15V;1.065nF@15V
Total Gate Charge (Qg@Vgs)12.6nC@10V;23.5nC@10V
Operating Temperature-55℃~+150℃@(Tj)

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