SIZ340DT-T1-GE3 by Vishay Intertech – Specifications

Vishay Intertech SIZ340DT-T1-GE3 is a SIZ340DT-T1-GE3 from Vishay Intertech, part of the MOSFETs. It is designed for 30V 9.5mΩ@15.6A,10V 2.4V@250uA 2 N-Channel Power-33-8 MOSFETs ROHS. This product comes in a Power-33-8 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 30V
  • Configuration: Half Bridge
  • Continuous Drain Current (Id): 30A;40A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 9.5mΩ@15.6A,10V
  • Power Dissipation (Pd): 16.7W;31W
  • Gate Threshold Voltage (Vgs(th)@Id): 2.4V@250uA
  • Type: 2 N-Channel
  • Input Capacitance (Ciss@Vds): 760pF@15V
  • Total Gate Charge (Qg@Vgs): 19nC@10V
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.165 grams.

More on SIZ340DT-T1-GE3

Full Specifications of SIZ340DT-T1-GE3

Model NumberSIZ340DT-T1-GE3
Model NameVishay Intertech SIZ340DT-T1-GE3
CategoryMOSFETs
BrandVishay Intertech
Description30V 9.5mΩ@15.6A,10V 2.4V@250uA 2 N-Channel Power-33-8 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.165 grams / 0.00582 oz
Package / CasePower-33-8
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)30V
ConfigurationHalf Bridge
Continuous Drain Current (Id)30A;40A
Drain Source On Resistance (RDS(on)@Vgs,Id)9.5mΩ@15.6A,10V
Power Dissipation (Pd)16.7W;31W
Gate Threshold Voltage (Vgs(th)@Id)2.4V@250uA
Reverse Transfer Capacitance (Crss@Vds)-
Type2 N-Channel
Input Capacitance (Ciss@Vds)760pF@15V
Total Gate Charge (Qg@Vgs)19nC@10V
Operating Temperature-55℃~+150℃@(Tj)

Compare Vishay Intertech - SIZ340DT-T1-GE3 With Other 200 Models

Related Models - SIZ340DT-T1-GE3 Alternative

Scroll to Top