SIZ350DT-T1-GE3 by Vishay Intertech – Specifications

Vishay Intertech SIZ350DT-T1-GE3 is a SIZ350DT-T1-GE3 from Vishay Intertech, part of the MOSFETs. It is designed for 30V 6.75mΩ@15A,10V 2.4V@250uA 2 N-Channel Power-33-8(3x3) MOSFETs ROHS. This product comes in a Power-33-8(3x3) package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 30V
  • Continuous Drain Current (Id): 18.5A;30A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 6.75mΩ@15A,10V
  • Gate Threshold Voltage (Vgs(th)@Id): 2.4V@250uA
  • Type: 2 N-Channel
  • Input Capacitance (Ciss@Vds): 940pF@15V
  • Total Gate Charge (Qg@Vgs): 20.3nC@10V
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

Full Specifications of SIZ350DT-T1-GE3

Model NumberSIZ350DT-T1-GE3
Model NameVishay Intertech SIZ350DT-T1-GE3
CategoryMOSFETs
BrandVishay Intertech
Description30V 6.75mΩ@15A,10V 2.4V@250uA 2 N-Channel Power-33-8(3x3) MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CasePower-33-8(3x3)
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)30V
Continuous Drain Current (Id)18.5A;30A
Drain Source On Resistance (RDS(on)@Vgs,Id)6.75mΩ@15A,10V
Gate Threshold Voltage (Vgs(th)@Id)2.4V@250uA
Type2 N-Channel
Input Capacitance (Ciss@Vds)940pF@15V
Total Gate Charge (Qg@Vgs)20.3nC@10V
Operating Temperature-55℃~+150℃@(Tj)

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