SIZ998BDT-T1-GE3 by Vishay Intertech – Specifications

Vishay Intertech SIZ998BDT-T1-GE3 is a SIZ998BDT-T1-GE3 from Vishay Intertech, part of the MOSFETs. It is designed for 30V 2.2V@250uA 2 N-Channel PowerPAIR-8(6x5) MOSFETs ROHS. This product comes in a PowerPAIR-8(6x5) package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 30V
  • Continuous Drain Current (Id): 23.7A;54.8A;36.2A;94.6A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 4.39mΩ@15A,10V;2.4mΩ@19A,10V
  • Gate Threshold Voltage (Vgs(th)@Id): 2.2V@250uA
  • Type: 2 N-Channel
  • Input Capacitance (Ciss@Vds): 790pF@15V;2.13nF@15V
  • Total Gate Charge (Qg@Vgs): 18nC@10V;46.7nC@10V
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.11 grams.

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Full Specifications of SIZ998BDT-T1-GE3

Model NumberSIZ998BDT-T1-GE3
Model NameVishay Intertech SIZ998BDT-T1-GE3
CategoryMOSFETs
BrandVishay Intertech
Description30V 2.2V@250uA 2 N-Channel PowerPAIR-8(6x5) MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.110 grams / 0.00388 oz
Package / CasePowerPAIR-8(6x5)
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)30V
Continuous Drain Current (Id)23.7A;54.8A;36.2A;94.6A
Drain Source On Resistance (RDS(on)@Vgs,Id)4.39mΩ@15A,10V;2.4mΩ@19A,10V
Gate Threshold Voltage (Vgs(th)@Id)2.2V@250uA
Type2 N-Channel
Input Capacitance (Ciss@Vds)790pF@15V;2.13nF@15V
Total Gate Charge (Qg@Vgs)18nC@10V;46.7nC@10V
Operating Temperature-55℃~+150℃@(Tj)

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