SIZF360DT-T1-GE3 by Vishay Intertech – Specifications

Vishay Intertech SIZF360DT-T1-GE3 is a SIZF360DT-T1-GE3 from Vishay Intertech, part of the MOSFETs. It is designed for 30V 2.2V@250uA 2 N-Channel - MOSFETs ROHS. This product comes in a - package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 30V
  • Continuous Drain Current (Id): 23A;83A;34A;143A
  • Power Dissipation (Pd): 3.8W;52W;4.3W;78W
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 4.5mΩ@10A,10V;1.9mΩ@10A,10V
  • Gate Threshold Voltage (Vgs(th)@Id): 2.2V@250uA
  • Type: 2 N-Channel
  • Input Capacitance (Ciss@Vds): 1.1nF@15V;3.15nF@15V
  • Total Gate Charge (Qg@Vgs): 22nC@10V;62nC@10V
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.038 grams.

More on SIZF360DT-T1-GE3

Full Specifications of SIZF360DT-T1-GE3

Model NumberSIZF360DT-T1-GE3
Model NameVishay Intertech SIZF360DT-T1-GE3
CategoryMOSFETs
BrandVishay Intertech
Description30V 2.2V@250uA 2 N-Channel - MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.038 grams / 0.00134 oz
Package / Case-
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)30V
Continuous Drain Current (Id)23A;83A;34A;143A
Power Dissipation (Pd)3.8W;52W;4.3W;78W
Drain Source On Resistance (RDS(on)@Vgs,Id)4.5mΩ@10A,10V;1.9mΩ@10A,10V
Gate Threshold Voltage (Vgs(th)@Id)2.2V@250uA
Type2 N-Channel
Input Capacitance (Ciss@Vds)1.1nF@15V;3.15nF@15V
Total Gate Charge (Qg@Vgs)22nC@10V;62nC@10V
Operating Temperature-55℃~+150℃@(Tj)

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