SIZF906BDT-T1-GE3 by Vishay Intertech – Specifications

Vishay Intertech SIZF906BDT-T1-GE3 is a SIZF906BDT-T1-GE3 from Vishay Intertech, part of the MOSFETs. It is designed for 30V 2.2V@250uA 2 N-Channel PowerPAIR-8(6x5) MOSFETs ROHS. This product comes in a PowerPAIR-8(6x5) package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 30V
  • Continuous Drain Current (Id): 36A;105A;63A;257A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 2.1mΩ@15A,10V;0.68mΩ@20A,10V
  • Gate Threshold Voltage (Vgs(th)@Id): 2.2V@250uA
  • Type: 2 N-Channel
  • Input Capacitance (Ciss@Vds): 1.63nF@15V;5.55nF@15V
  • Total Gate Charge (Qg@Vgs): 49nC@10V;165nC@10V
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.13 grams.

More on SIZF906BDT-T1-GE3

Full Specifications of SIZF906BDT-T1-GE3

Model NumberSIZF906BDT-T1-GE3
Model NameVishay Intertech SIZF906BDT-T1-GE3
CategoryMOSFETs
BrandVishay Intertech
Description30V 2.2V@250uA 2 N-Channel PowerPAIR-8(6x5) MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.130 grams / 0.004586 oz
Package / CasePowerPAIR-8(6x5)
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)30V
Continuous Drain Current (Id)36A;105A;63A;257A
Drain Source On Resistance (RDS(on)@Vgs,Id)2.1mΩ@15A,10V;0.68mΩ@20A,10V
Gate Threshold Voltage (Vgs(th)@Id)2.2V@250uA
Type2 N-Channel
Input Capacitance (Ciss@Vds)1.63nF@15V;5.55nF@15V
Total Gate Charge (Qg@Vgs)49nC@10V;165nC@10V
Operating Temperature-55℃~+150℃@(Tj)

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