SQ1470AEH-T1_GE3 by Vishay Intertech – Specifications

Vishay Intertech SQ1470AEH-T1_GE3 is a SQ1470AEH-T1_GE3 from Vishay Intertech, part of the MOSFETs. It is designed for 30V 1.7A 65mΩ@4.2A,4.5V 3.3W 1.6V@250uA 1PCSNChannel SOT-363-6 MOSFETs ROHS. This product comes in a SOT-363-6 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 30V
  • Continuous Drain Current (Id): 1.7A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 65mΩ@4.2A,4.5V
  • Power Dissipation (Pd): 3.3W
  • Gate Threshold Voltage (Vgs(th)@Id): 1.6V@250uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 450pF@15V
  • Total Gate Charge (Qg@Vgs): [email protected]
  • Operating Temperature: -55℃~+175℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.037 grams.

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Full Specifications of SQ1470AEH-T1_GE3

Model NumberSQ1470AEH-T1_GE3
Model NameVishay Intertech SQ1470AEH-T1_GE3
CategoryMOSFETs
BrandVishay Intertech
Description30V 1.7A 65mΩ@4.2A,4.5V 3.3W 1.6V@250uA 1PCSNChannel SOT-363-6 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.037 grams / 0.001305 oz
Package / CaseSOT-363-6
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)30V
Continuous Drain Current (Id)1.7A
Drain Source On Resistance (RDS(on)@Vgs,Id)65mΩ@4.2A,4.5V
Power Dissipation (Pd)3.3W
Gate Threshold Voltage (Vgs(th)@Id)1.6V@250uA
Reverse Transfer Capacitance (Crss@Vds)-
Type1PCSNChannel
Input Capacitance (Ciss@Vds)450pF@15V
Total Gate Charge (Qg@Vgs)[email protected]
Operating Temperature-55℃~+175℃@(Tj)

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