SQ1912AEEH-T1_GE3 by Vishay Intertech – Specifications

Vishay Intertech SQ1912AEEH-T1_GE3 is a SQ1912AEEH-T1_GE3 from Vishay Intertech, part of the MOSFETs. It is designed for 20V 800mA 280mΩ@1.2A,4.5V 1.5W 1.5V@250uA 2 N-Channel SOT-363-6 MOSFETs ROHS. This product comes in a SOT-363-6 package and is sold as Tape & Reel (TR). Key features include:

• Drain Source Voltage (Vdss): 20V
• Continuous Drain Current (Id): 800mA
• Drain Source On Resistance (RDS(on)@Vgs,Id): 280mΩ@1.2A,4.5V
• Power Dissipation (Pd): 1.5W
• Gate Threshold Voltage (Vgs(th)@Id): 1.5V@250uA
• Type: 2 N-Channel
• Input Capacitance (Ciss@Vds): 27pF@10V
• Total Gate Charge (Qg@Vgs): [email protected]
• Operating Temperature: -55℃~+175℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.