SQ1922AEEH-T1_GE3 by Vishay Intertech – Specifications

Vishay Intertech SQ1922AEEH-T1_GE3 is a SQ1922AEEH-T1_GE3 from Vishay Intertech, part of the MOSFETs. It is designed for 20V 850mA 1.5W 300mΩ@400mA,4.5V 2.5V@250uA 2 N-Channel SC-70-6 MOSFETs ROHS. This product comes in a SC-70-6 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 20V
  • Continuous Drain Current (Id): 850mA
  • Power Dissipation (Pd): 1.5W
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 300mΩ@400mA,4.5V
  • Gate Threshold Voltage (Vgs(th)@Id): 2.5V@250uA
  • Type: 2 N-Channel
  • Input Capacitance (Ciss@Vds): 60pF@10V
  • Total Gate Charge (Qg@Vgs): [email protected]
  • Operating Temperature: -55℃~+175℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

Full Specifications of SQ1922AEEH-T1_GE3

Model NumberSQ1922AEEH-T1_GE3
Model NameVishay Intertech SQ1922AEEH-T1_GE3
CategoryMOSFETs
BrandVishay Intertech
Description20V 850mA 1.5W 300mΩ@400mA,4.5V 2.5V@250uA 2 N-Channel SC-70-6 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CaseSC-70-6
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)20V
Continuous Drain Current (Id)850mA
Power Dissipation (Pd)1.5W
Drain Source On Resistance (RDS(on)@Vgs,Id)300mΩ@400mA,4.5V
Gate Threshold Voltage (Vgs(th)@Id)2.5V@250uA
Type2 N-Channel
Input Capacitance (Ciss@Vds)60pF@10V
Total Gate Charge (Qg@Vgs)[email protected]
Operating Temperature-55℃~+175℃@(Tj)

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