SQ2309ES-T1_GE3 by Vishay Intertech – Specifications

Vishay Intertech SQ2309ES-T1_GE3 is a SQ2309ES-T1_GE3 from Vishay Intertech, part of the MOSFETs. It is designed for 60V 1.7A 2W 336mΩ@10V,3.8A 2.5V@250uA 1PCSPChannel SOT-23 MOSFETs ROHS. This product comes in a SOT-23 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 60V
  • Continuous Drain Current (Id): 1.7A
  • Power Dissipation (Pd): 2W
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 336mΩ@10V,3.8A
  • Gate Threshold Voltage (Vgs(th)@Id): 2.5V@250uA
  • Type: 1PCSPChannel
  • Input Capacitance (Ciss@Vds): 265pF@25V
  • Total Gate Charge (Qg@Vgs): 8.5nC@10V
  • Operating Temperature: -55℃~+175℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.041 grams.

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Full Specifications of SQ2309ES-T1_GE3

Model NumberSQ2309ES-T1_GE3
Model NameVishay Intertech SQ2309ES-T1_GE3
CategoryMOSFETs
BrandVishay Intertech
Description60V 1.7A 2W 336mΩ@10V,3.8A 2.5V@250uA 1PCSPChannel SOT-23 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.041 grams / 0.001446 oz
Package / CaseSOT-23
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)60V
Continuous Drain Current (Id)1.7A
Power Dissipation (Pd)2W
Drain Source On Resistance (RDS(on)@Vgs,Id)336mΩ@10V,3.8A
Gate Threshold Voltage (Vgs(th)@Id)2.5V@250uA
Type1PCSPChannel
Input Capacitance (Ciss@Vds)265pF@25V
Total Gate Charge (Qg@Vgs)8.5nC@10V
Operating Temperature-55℃~+175℃@(Tj)

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