SQ2318AES-T1_GE3 by Vishay Intertech – Specifications

Vishay Intertech SQ2318AES-T1_GE3 is a SQ2318AES-T1_GE3 from Vishay Intertech, part of the MOSFETs. It is designed for 40V 8A 31mΩ@10V,6A 3W 2.5V@250uA 1PCSNChannel SOT-23 MOSFETs ROHS. This product comes in a SOT-23 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 40V
  • Continuous Drain Current (Id): 8A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 31mΩ@10V,6A
  • Power Dissipation (Pd): 3W
  • Gate Threshold Voltage (Vgs(th)@Id): 2.5V@250uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 555pF@10V
  • Total Gate Charge (Qg@Vgs): 13nC@10V
  • Operating Temperature: -55℃~+175℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.035 grams.

More on SQ2318AES-T1_GE3

Full Specifications of SQ2318AES-T1_GE3

Model NumberSQ2318AES-T1_GE3
Model NameVishay Intertech SQ2318AES-T1_GE3
CategoryMOSFETs
BrandVishay Intertech
Description40V 8A 31mΩ@10V,6A 3W 2.5V@250uA 1PCSNChannel SOT-23 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.035 grams / 0.001235 oz
Package / CaseSOT-23
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)40V
Continuous Drain Current (Id)8A
Drain Source On Resistance (RDS(on)@Vgs,Id)31mΩ@10V,6A
Power Dissipation (Pd)3W
Gate Threshold Voltage (Vgs(th)@Id)2.5V@250uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)555pF@10V
Total Gate Charge (Qg@Vgs)13nC@10V
Operating Temperature-55℃~+175℃@(Tj)

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