SQ2325ES-T1_GE3 by Vishay Intertech – Specifications

Vishay Intertech SQ2325ES-T1_GE3 is a SQ2325ES-T1_GE3 from Vishay Intertech, part of the MOSFETs. It is designed for 150V 840mA 1.77Ω@10V,500mA 3W 3.5V@250uA 1PCSPChannel SOT-23 MOSFETs ROHS. This product comes in a SOT-23 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 150V
  • Continuous Drain Current (Id): 840mA
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 1.77Ω@10V,500mA
  • Power Dissipation (Pd): 3W
  • Gate Threshold Voltage (Vgs(th)@Id): 3.5V@250uA
  • Type: 1PCSPChannel
  • Input Capacitance (Ciss@Vds): 250pF@50V
  • Total Gate Charge (Qg@Vgs): 10nC@10V
  • Operating Temperature: -55℃~+175℃@(Ta)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.035 grams.

More on SQ2325ES-T1_GE3

Full Specifications of SQ2325ES-T1_GE3

Model NumberSQ2325ES-T1_GE3
Model NameVishay Intertech SQ2325ES-T1_GE3
CategoryMOSFETs
BrandVishay Intertech
Description150V 840mA 1.77Ω@10V,500mA 3W 3.5V@250uA 1PCSPChannel SOT-23 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.035 grams / 0.001235 oz
Package / CaseSOT-23
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)150V
Continuous Drain Current (Id)840mA
Drain Source On Resistance (RDS(on)@Vgs,Id)1.77Ω@10V,500mA
Power Dissipation (Pd)3W
Gate Threshold Voltage (Vgs(th)@Id)3.5V@250uA
Type1PCSPChannel
Input Capacitance (Ciss@Vds)250pF@50V
Total Gate Charge (Qg@Vgs)10nC@10V
Operating Temperature-55℃~+175℃@(Ta)

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