SQ2337ES-T1_GE3 by Vishay Intertech – Specifications

Vishay Intertech SQ2337ES-T1_GE3 is a SQ2337ES-T1_GE3 from Vishay Intertech, part of the MOSFETs. It is designed for 80V 2.2A 290mΩ@1A,4.5V 3W 2.5V@250uA 1PCSPChannel SOT-23-3 MOSFETs ROHS. This product comes in a SOT-23-3 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 80V
  • Continuous Drain Current (Id): 2.2A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 290mΩ@1A,4.5V
  • Power Dissipation (Pd): 3W
  • Gate Threshold Voltage (Vgs(th)@Id): 2.5V@250uA
  • Type: 1PCSPChannel
  • Input Capacitance (Ciss@Vds): 620pF@30V
  • Total Gate Charge (Qg@Vgs): 18nC@10V
  • Operating Temperature: -55℃~+175℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.04 grams.

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Full Specifications of SQ2337ES-T1_GE3

Model NumberSQ2337ES-T1_GE3
Model NameVishay Intertech SQ2337ES-T1_GE3
CategoryMOSFETs
BrandVishay Intertech
Description80V 2.2A 290mΩ@1A,4.5V 3W 2.5V@250uA 1PCSPChannel SOT-23-3 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.040 grams / 0.001411 oz
Package / CaseSOT-23-3
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)80V
Continuous Drain Current (Id)2.2A
Drain Source On Resistance (RDS(on)@Vgs,Id)290mΩ@1A,4.5V
Power Dissipation (Pd)3W
Gate Threshold Voltage (Vgs(th)@Id)2.5V@250uA
Reverse Transfer Capacitance (Crss@Vds)-
Type1PCSPChannel
Input Capacitance (Ciss@Vds)620pF@30V
Total Gate Charge (Qg@Vgs)18nC@10V
Operating Temperature-55℃~+175℃@(Tj)

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