SQ2364EES-T1_GE3 by Vishay Intertech – Specifications

Vishay Intertech SQ2364EES-T1_GE3 is a SQ2364EES-T1_GE3 from Vishay Intertech, part of the MOSFETs. It is designed for 60V 2A 3W 240mΩ@2A,4.5V 1V@250uA 1PCSNChannel SOT-23-3(TO-236-3) MOSFETs ROHS. This product comes in a SOT-23-3(TO-236-3) package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 60V
  • Continuous Drain Current (Id): 2A
  • Power Dissipation (Pd): 3W
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 240mΩ@2A,4.5V
  • Gate Threshold Voltage (Vgs(th)@Id): 1V@250uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 330pF@25V
  • Total Gate Charge (Qg@Vgs): [email protected]
  • Operating Temperature: -55℃~+175℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.045 grams.

Full Specifications of SQ2364EES-T1_GE3

Model NumberSQ2364EES-T1_GE3
Model NameVishay Intertech SQ2364EES-T1_GE3
CategoryMOSFETs
BrandVishay Intertech
Description60V 2A 3W 240mΩ@2A,4.5V 1V@250uA 1PCSNChannel SOT-23-3(TO-236-3) MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.045 grams / 0.001587 oz
Package / CaseSOT-23-3(TO-236-3)
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)60V
Continuous Drain Current (Id)2A
Power Dissipation (Pd)3W
Drain Source On Resistance (RDS(on)@Vgs,Id)240mΩ@2A,4.5V
Gate Threshold Voltage (Vgs(th)@Id)1V@250uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)330pF@25V
Total Gate Charge (Qg@Vgs)[email protected]
Operating Temperature-55℃~+175℃@(Tj)

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