SQ2389ES-T1_BE3 by Vishay Intertech – Specifications

Vishay Intertech SQ2389ES-T1_BE3 is a SQ2389ES-T1_BE3 from Vishay Intertech, part of the MOSFETs. It is designed for 40V 4.1A 94mΩ@10A,10V 3W 2.5V@250uA 1PCSPChannel SOT-23-3(TO-236-3) MOSFETs ROHS. This product comes in a SOT-23-3(TO-236-3) package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 40V
  • Continuous Drain Current (Id): 4.1A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 94mΩ@10A,10V
  • Power Dissipation (Pd): 3W
  • Gate Threshold Voltage (Vgs(th)@Id): 2.5V@250uA
  • Type: 1PCSPChannel
  • Input Capacitance (Ciss@Vds): 420pF@20V
  • Total Gate Charge (Qg@Vgs): 12nC@10V
  • Operating Temperature: -55℃~+175℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.048 grams.

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Full Specifications of SQ2389ES-T1_BE3

Model NumberSQ2389ES-T1_BE3
Model NameVishay Intertech SQ2389ES-T1_BE3
CategoryMOSFETs
BrandVishay Intertech
Description40V 4.1A 94mΩ@10A,10V 3W 2.5V@250uA 1PCSPChannel SOT-23-3(TO-236-3) MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.048 grams / 0.001693 oz
Package / CaseSOT-23-3(TO-236-3)
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)40V
Continuous Drain Current (Id)4.1A
Drain Source On Resistance (RDS(on)@Vgs,Id)94mΩ@10A,10V
Power Dissipation (Pd)3W
Gate Threshold Voltage (Vgs(th)@Id)2.5V@250uA
Type1PCSPChannel
Input Capacitance (Ciss@Vds)420pF@20V
Total Gate Charge (Qg@Vgs)12nC@10V
Operating Temperature-55℃~+175℃@(Tj)

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