SQ4153EY-T1_BE3 by Vishay Intertech – Specifications

Vishay Intertech SQ4153EY-T1_BE3 is a SQ4153EY-T1_BE3 from Vishay Intertech, part of the MOSFETs. It is designed for 12V 25A 7.1W 8.32mΩ@14A,4.5V 900mV@250uA 1PCSPChannel SOIC-8 MOSFETs ROHS. This product comes in a SOIC-8 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 12V
  • Continuous Drain Current (Id): 25A
  • Power Dissipation (Pd): 7.1W
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 8.32mΩ@14A,4.5V
  • Gate Threshold Voltage (Vgs(th)@Id): 900mV@250uA
  • Type: 1PCSPChannel
  • Input Capacitance (Ciss@Vds): 11nF@6V
  • Total Gate Charge (Qg@Vgs): [email protected]
  • Operating Temperature: -55℃~+175℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

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Full Specifications of SQ4153EY-T1_BE3

Model NumberSQ4153EY-T1_BE3
Model NameVishay Intertech SQ4153EY-T1_BE3
CategoryMOSFETs
BrandVishay Intertech
Description12V 25A 7.1W 8.32mΩ@14A,4.5V 900mV@250uA 1PCSPChannel SOIC-8 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CaseSOIC-8
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)12V
Continuous Drain Current (Id)25A
Power Dissipation (Pd)7.1W
Drain Source On Resistance (RDS(on)@Vgs,Id)8.32mΩ@14A,4.5V
Gate Threshold Voltage (Vgs(th)@Id)900mV@250uA
Type1PCSPChannel
Input Capacitance (Ciss@Vds)11nF@6V
Total Gate Charge (Qg@Vgs)[email protected]
Operating Temperature-55℃~+175℃@(Tj)

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