SQ4532AEY-T1_BE3 by Vishay Intertech – Specifications

Vishay Intertech SQ4532AEY-T1_BE3 is a SQ4532AEY-T1_BE3 from Vishay Intertech, part of the MOSFETs. It is designed for 30V 3.3W 2.5V@250uA 1PCSNChannel+1PCSPChannel SOIC-8 MOSFETs ROHS. This product comes in a SOIC-8 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 30V
  • Continuous Drain Current (Id): 7.3A;5.3A
  • Power Dissipation (Pd): 3.3W
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 31mΩ@4.9A,10V;70mΩ@3.5A,10V
  • Gate Threshold Voltage (Vgs(th)@Id): 2.5V@250uA
  • Type: 1PCSNChannel+1PCSPChannel
  • Input Capacitance (Ciss@Vds): 535pF@15V;528pF@15V
  • Total Gate Charge (Qg@Vgs): 7.8nC@10V;10.2nC@10V
  • Operating Temperature: -55℃~+175℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

More on SQ4532AEY-T1_BE3

Full Specifications of SQ4532AEY-T1_BE3

Model NumberSQ4532AEY-T1_BE3
Model NameVishay Intertech SQ4532AEY-T1_BE3
CategoryMOSFETs
BrandVishay Intertech
Description30V 3.3W 2.5V@250uA 1PCSNChannel+1PCSPChannel SOIC-8 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CaseSOIC-8
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)30V
Continuous Drain Current (Id)7.3A;5.3A
Power Dissipation (Pd)3.3W
Drain Source On Resistance (RDS(on)@Vgs,Id)31mΩ@4.9A,10V;70mΩ@3.5A,10V
Gate Threshold Voltage (Vgs(th)@Id)2.5V@250uA
Type1PCSNChannel+1PCSPChannel
Input Capacitance (Ciss@Vds)535pF@15V;528pF@15V
Total Gate Charge (Qg@Vgs)7.8nC@10V;10.2nC@10V
Operating Temperature-55℃~+175℃@(Tj)

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