SQ4917EY-T1_GE3 by Vishay Intertech – Specifications

Vishay Intertech SQ4917EY-T1_GE3 is a SQ4917EY-T1_GE3 from Vishay Intertech, part of the MOSFETs. It is designed for 60V 8A 48mΩ@4.3A,10V 5W 2.5V@250uA 2 P-Channel SO-8 MOSFETs ROHS. This product comes in a SO-8 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 60V
  • Continuous Drain Current (Id): 8A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 48mΩ@4.3A,10V
  • Power Dissipation (Pd): 5W
  • Gate Threshold Voltage (Vgs(th)@Id): 2.5V@250uA
  • Type: 2 P-Channel
  • Input Capacitance (Ciss@Vds): 1.91nF@30V
  • Total Gate Charge (Qg@Vgs): 65nC@10V
  • Operating Temperature: -55℃~+175℃@(Ta)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.12 grams.

Full Specifications of SQ4917EY-T1_GE3

Model NumberSQ4917EY-T1_GE3
Model NameVishay Intertech SQ4917EY-T1_GE3
CategoryMOSFETs
BrandVishay Intertech
Description60V 8A 48mΩ@4.3A,10V 5W 2.5V@250uA 2 P-Channel SO-8 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.120 grams / 0.004233 oz
Package / CaseSO-8
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)60V
Continuous Drain Current (Id)8A
Drain Source On Resistance (RDS(on)@Vgs,Id)48mΩ@4.3A,10V
Power Dissipation (Pd)5W
Gate Threshold Voltage (Vgs(th)@Id)2.5V@250uA
Reverse Transfer Capacitance (Crss@Vds)-
Type2 P-Channel
Input Capacitance (Ciss@Vds)1.91nF@30V
Total Gate Charge (Qg@Vgs)65nC@10V
Operating Temperature-55℃~+175℃@(Ta)

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