SQ4940AEY-T1_GE3 by Vishay Intertech – Specifications

Vishay Intertech SQ4940AEY-T1_GE3 is a SQ4940AEY-T1_GE3 from Vishay Intertech, part of the MOSFETs. It is designed for 40V 8A 24mΩ@5.3A,10V 4W 2.5V@250uA 2 N-Channel SO-8 MOSFETs ROHS. This product comes in a SO-8 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 40V
  • Continuous Drain Current (Id): 8A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 24mΩ@5.3A,10V
  • Power Dissipation (Pd): 4W
  • Gate Threshold Voltage (Vgs(th)@Id): 2.5V@250uA
  • Type: 2 N-Channel
  • Input Capacitance (Ciss@Vds): 741pF@20V
  • Total Gate Charge (Qg@Vgs): 43nC@10V
  • Operating Temperature: -55℃~+175℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.138 grams.

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Full Specifications of SQ4940AEY-T1_GE3

Model NumberSQ4940AEY-T1_GE3
Model NameVishay Intertech SQ4940AEY-T1_GE3
CategoryMOSFETs
BrandVishay Intertech
Description40V 8A 24mΩ@5.3A,10V 4W 2.5V@250uA 2 N-Channel SO-8 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.138 grams / 0.004868 oz
Package / CaseSO-8
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)40V
Continuous Drain Current (Id)8A
Drain Source On Resistance (RDS(on)@Vgs,Id)24mΩ@5.3A,10V
Power Dissipation (Pd)4W
Gate Threshold Voltage (Vgs(th)@Id)2.5V@250uA
Reverse Transfer Capacitance (Crss@Vds)-
Type2 N-Channel
Input Capacitance (Ciss@Vds)741pF@20V
Total Gate Charge (Qg@Vgs)43nC@10V
Operating Temperature-55℃~+175℃@(Tj)

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