SQ9945BEY-T1_GE3 by Vishay Intertech – Specifications

Vishay Intertech SQ9945BEY-T1_GE3 is a SQ9945BEY-T1_GE3 from Vishay Intertech, part of the MOSFETs. It is designed for 60V 5.4A 64mΩ@10V,3.4A 4W 2.5V@250uA 2 N-Channel SOIC-8-150mil MOSFETs ROHS. This product comes in a SOIC-8-150mil package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 60V
  • Continuous Drain Current (Id): 5.4A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 64mΩ@10V,3.4A
  • Power Dissipation (Pd): 4W
  • Gate Threshold Voltage (Vgs(th)@Id): 2.5V@250uA
  • Type: 2 N-Channel
  • Input Capacitance (Ciss@Vds): 470pF@25V
  • Total Gate Charge (Qg@Vgs): 12nC@10V
  • Operating Temperature: -55℃~+175℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.28 grams.

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Full Specifications of SQ9945BEY-T1_GE3

Model NumberSQ9945BEY-T1_GE3
Model NameVishay Intertech SQ9945BEY-T1_GE3
CategoryMOSFETs
BrandVishay Intertech
Description60V 5.4A 64mΩ@10V,3.4A 4W 2.5V@250uA 2 N-Channel SOIC-8-150mil MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.280 grams / 0.009877 oz
Package / CaseSOIC-8-150mil
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)60V
Continuous Drain Current (Id)5.4A
Drain Source On Resistance (RDS(on)@Vgs,Id)64mΩ@10V,3.4A
Power Dissipation (Pd)4W
Gate Threshold Voltage (Vgs(th)@Id)2.5V@250uA
Type2 N-Channel
Input Capacitance (Ciss@Vds)470pF@25V
Total Gate Charge (Qg@Vgs)12nC@10V
Operating Temperature-55℃~+175℃@(Tj)

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