SQA410CEJW-T1_GE3 by Vishay Intertech – Specifications

Vishay Intertech SQA410CEJW-T1_GE3 is a SQA410CEJW-T1_GE3 from Vishay Intertech, part of the MOSFETs. It is designed for 20V 7.8A 28mΩ@5A,4.5V 13.6W 1.1V@250uA 1PCSNChannel PowerPAK-SC-70-6-Dual MOSFETs ROHS. This product comes in a PowerPAK-SC-70-6-Dual package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 20V
  • Continuous Drain Current (Id): 7.8A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 28mΩ@5A,4.5V
  • Power Dissipation (Pd): 13.6W
  • Gate Threshold Voltage (Vgs(th)@Id): 1.1V@250uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 525pF@10V
  • Total Gate Charge (Qg@Vgs): [email protected]
  • Operating Temperature: -55℃~+175℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

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Full Specifications of SQA410CEJW-T1_GE3

Model NumberSQA410CEJW-T1_GE3
Model NameVishay Intertech SQA410CEJW-T1_GE3
CategoryMOSFETs
BrandVishay Intertech
Description20V 7.8A 28mΩ@5A,4.5V 13.6W 1.1V@250uA 1PCSNChannel PowerPAK-SC-70-6-Dual MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CasePowerPAK-SC-70-6-Dual
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)20V
Continuous Drain Current (Id)7.8A
Drain Source On Resistance (RDS(on)@Vgs,Id)28mΩ@5A,4.5V
Power Dissipation (Pd)13.6W
Gate Threshold Voltage (Vgs(th)@Id)1.1V@250uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)525pF@10V
Total Gate Charge (Qg@Vgs)[email protected]
Operating Temperature-55℃~+175℃@(Tj)

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