SQA413CEJW-T1_GE3 by Vishay Intertech – Specifications

Vishay Intertech SQA413CEJW-T1_GE3 is a SQA413CEJW-T1_GE3 from Vishay Intertech, part of the MOSFETs. It is designed for 20V 7.5A 13.6W 38mΩ@4.5A,4.5V 1.3V@250uA 1PCSPChannel SC-70-6(SOT-363) MOSFETs ROHS. This product comes in a SC-70-6(SOT-363) package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 20V
  • Continuous Drain Current (Id): 7.5A
  • Power Dissipation (Pd): 13.6W
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 38mΩ@4.5A,4.5V
  • Gate Threshold Voltage (Vgs(th)@Id): 1.3V@250uA
  • Type: 1PCSPChannel
  • Input Capacitance (Ciss@Vds): 1.35nF@10V
  • Total Gate Charge (Qg@Vgs): [email protected]
  • Operating Temperature: -55℃~+175℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.039 grams.

Full Specifications of SQA413CEJW-T1_GE3

Model NumberSQA413CEJW-T1_GE3
Model NameVishay Intertech SQA413CEJW-T1_GE3
CategoryMOSFETs
BrandVishay Intertech
Description20V 7.5A 13.6W 38mΩ@4.5A,4.5V 1.3V@250uA 1PCSPChannel SC-70-6(SOT-363) MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.039 grams / 0.001376 oz
Package / CaseSC-70-6(SOT-363)
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)20V
Continuous Drain Current (Id)7.5A
Power Dissipation (Pd)13.6W
Drain Source On Resistance (RDS(on)@Vgs,Id)38mΩ@4.5A,4.5V
Gate Threshold Voltage (Vgs(th)@Id)1.3V@250uA
Type1PCSPChannel
Input Capacitance (Ciss@Vds)1.35nF@10V
Total Gate Charge (Qg@Vgs)[email protected]
Operating Temperature-55℃~+175℃@(Tj)

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