SQA600CEJW-T1_GE3 by Vishay Intertech – Specifications

Vishay Intertech SQA600CEJW-T1_GE3 is a SQA600CEJW-T1_GE3 from Vishay Intertech, part of the MOSFETs. It is designed for 80V 9A 13.6W 54.6mΩ@3A,10V 2.5V@250uA 1PCSNChannel PowerPAK-SC-70W-6 MOSFETs ROHS. This product comes in a PowerPAK-SC-70W-6 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 80V
  • Continuous Drain Current (Id): 9A
  • Power Dissipation (Pd): 13.6W
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 54.6mΩ@3A,10V
  • Gate Threshold Voltage (Vgs(th)@Id): 2.5V@250uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 540pF@25V
  • Total Gate Charge (Qg@Vgs): 9nC@10V
  • Operating Temperature: -55℃~+175℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.04 grams.

Full Specifications of SQA600CEJW-T1_GE3

Model NumberSQA600CEJW-T1_GE3
Model NameVishay Intertech SQA600CEJW-T1_GE3
CategoryMOSFETs
BrandVishay Intertech
Description80V 9A 13.6W 54.6mΩ@3A,10V 2.5V@250uA 1PCSNChannel PowerPAK-SC-70W-6 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.040 grams / 0.001411 oz
Package / CasePowerPAK-SC-70W-6
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)80V
Continuous Drain Current (Id)9A
Power Dissipation (Pd)13.6W
Drain Source On Resistance (RDS(on)@Vgs,Id)54.6mΩ@3A,10V
Gate Threshold Voltage (Vgs(th)@Id)2.5V@250uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)540pF@25V
Total Gate Charge (Qg@Vgs)9nC@10V
Operating Temperature-55℃~+175℃@(Tj)

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