SQD100N02_3M5L4GE3 by Vishay Intertech – Specifications

Vishay Intertech SQD100N02_3M5L4GE3 is a SQD100N02_3M5L4GE3 from Vishay Intertech, part of the MOSFETs. It is designed for 20V 100A 83W 3.5mΩ@30A,10V 2.5V@250uA 1PCSNChannel TO-252AA MOSFETs ROHS. This product comes in a TO-252AA package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 20V
  • Continuous Drain Current (Id): 100A
  • Power Dissipation (Pd): 83W
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 3.5mΩ@30A,10V
  • Gate Threshold Voltage (Vgs(th)@Id): 2.5V@250uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 5.5nF@10V
  • Total Gate Charge (Qg@Vgs): 110nC@10V
  • Operating Temperature: -55℃~+175℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

More on SQD100N02_3M5L4GE3

Full Specifications of SQD100N02_3M5L4GE3

Model NumberSQD100N02_3M5L4GE3
Model NameVishay Intertech SQD100N02_3M5L4GE3
CategoryMOSFETs
BrandVishay Intertech
Description20V 100A 83W 3.5mΩ@30A,10V 2.5V@250uA 1PCSNChannel TO-252AA MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CaseTO-252AA
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)20V
Continuous Drain Current (Id)100A
Power Dissipation (Pd)83W
Drain Source On Resistance (RDS(on)@Vgs,Id)3.5mΩ@30A,10V
Gate Threshold Voltage (Vgs(th)@Id)2.5V@250uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)5.5nF@10V
Total Gate Charge (Qg@Vgs)110nC@10V
Operating Temperature-55℃~+175℃@(Tj)

Compare Vishay Intertech - SQD100N02_3M5L4GE3 With Other 200 Models

Related Models - SQD100N02_3M5L4GE3 Alternative

Scroll to Top