SQD50N04-5M6_GE3 by Vishay Intertech – Specifications

Vishay Intertech SQD50N04-5M6_GE3 is a SQD50N04-5M6_GE3 from Vishay Intertech, part of the MOSFETs. It is designed for 40V 50A 5.6mΩ@20A,10V 71W 3.5V@250uA 1PCSNChannel TO-252 MOSFETs ROHS. This product comes in a TO-252 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 40V
  • Continuous Drain Current (Id): 50A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 5.6mΩ@20A,10V
  • Power Dissipation (Pd): 71W
  • Gate Threshold Voltage (Vgs(th)@Id): 3.5V@250uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 4nF@25V
  • Total Gate Charge (Qg@Vgs): 85nC@10V
  • Operating Temperature: -55℃~+175℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.742 grams.

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Full Specifications of SQD50N04-5M6_GE3

Model NumberSQD50N04-5M6_GE3
Model NameVishay Intertech SQD50N04-5M6_GE3
CategoryMOSFETs
BrandVishay Intertech
Description40V 50A 5.6mΩ@20A,10V 71W 3.5V@250uA 1PCSNChannel TO-252 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.742 grams / 0.026173 oz
Package / CaseTO-252
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)40V
Continuous Drain Current (Id)50A
Drain Source On Resistance (RDS(on)@Vgs,Id)5.6mΩ@20A,10V
Power Dissipation (Pd)71W
Gate Threshold Voltage (Vgs(th)@Id)3.5V@250uA
Reverse Transfer Capacitance (Crss@Vds)-
Type1PCSNChannel
Input Capacitance (Ciss@Vds)4nF@25V
Total Gate Charge (Qg@Vgs)85nC@10V
Operating Temperature-55℃~+175℃@(Tj)

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