SQD50N06-09L_GE3 by Vishay Intertech – Specifications

Vishay Intertech SQD50N06-09L_GE3 is a SQD50N06-09L_GE3 from Vishay Intertech, part of the MOSFETs. It is designed for 60V 50A 136W 9mΩ@10V,20A 2.5V@250uA 1PCSNChannel TO-252(DPAK) MOSFETs ROHS. This product comes in a TO-252(DPAK) package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 60V
  • Continuous Drain Current (Id): 50A
  • Power Dissipation (Pd): 136W
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 9mΩ@10V,20A
  • Gate Threshold Voltage (Vgs(th)@Id): 2.5V@250uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 3.065nF@25V
  • Total Gate Charge (Qg@Vgs): 72nC@10V
  • Operating Temperature: -55℃~+175℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.528 grams.

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Full Specifications of SQD50N06-09L_GE3

Model NumberSQD50N06-09L_GE3
Model NameVishay Intertech SQD50N06-09L_GE3
CategoryMOSFETs
BrandVishay Intertech
Description60V 50A 136W 9mΩ@10V,20A 2.5V@250uA 1PCSNChannel TO-252(DPAK) MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.528 grams / 0.018625 oz
Package / CaseTO-252(DPAK)
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)60V
Continuous Drain Current (Id)50A
Power Dissipation (Pd)136W
Drain Source On Resistance (RDS(on)@Vgs,Id)9mΩ@10V,20A
Gate Threshold Voltage (Vgs(th)@Id)2.5V@250uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)3.065nF@25V
Total Gate Charge (Qg@Vgs)72nC@10V
Operating Temperature-55℃~+175℃@(Tj)

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