SQD50N10-8M9L_GE3 by Vishay Intertech – Specifications

Vishay Intertech SQD50N10-8M9L_GE3 is a SQD50N10-8M9L_GE3 from Vishay Intertech, part of the MOSFETs. It is designed for 100V 50A 8.9mΩ@10V,15A 136W 2.5V@250uA 1PCSNChannel TO-252-2 MOSFETs ROHS. This product comes in a TO-252-2 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 100V
  • Continuous Drain Current (Id): 50A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 8.9mΩ@10V,15A
  • Power Dissipation (Pd): 136W
  • Gate Threshold Voltage (Vgs(th)@Id): 2.5V@250uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 2.95nF@25V
  • Total Gate Charge (Qg@Vgs): 70nC@10V
  • Operating Temperature: -55℃~+175℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.442 grams.

More on SQD50N10-8M9L_GE3

Full Specifications of SQD50N10-8M9L_GE3

Model NumberSQD50N10-8M9L_GE3
Model NameVishay Intertech SQD50N10-8M9L_GE3
CategoryMOSFETs
BrandVishay Intertech
Description100V 50A 8.9mΩ@10V,15A 136W 2.5V@250uA 1PCSNChannel TO-252-2 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.442 grams / 0.015591 oz
Package / CaseTO-252-2
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)100V
Continuous Drain Current (Id)50A
Drain Source On Resistance (RDS(on)@Vgs,Id)8.9mΩ@10V,15A
Power Dissipation (Pd)136W
Gate Threshold Voltage (Vgs(th)@Id)2.5V@250uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)2.95nF@25V
Total Gate Charge (Qg@Vgs)70nC@10V
Operating Temperature-55℃~+175℃@(Tj)

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