SQJ123ELP-T1_GE3 by Vishay Intertech – Specifications

Vishay Intertech SQJ123ELP-T1_GE3 is a SQJ123ELP-T1_GE3 from Vishay Intertech, part of the MOSFETs. It is designed for 12V 238A 375W 4mΩ@10A,4.5V 1.5V@250uA 1PCSPChannel PowerPAK-SO-8 MOSFETs ROHS. This product comes in a PowerPAK-SO-8 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 12V
  • Continuous Drain Current (Id): 238A
  • Power Dissipation (Pd): 375W
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 4mΩ@10A,4.5V
  • Gate Threshold Voltage (Vgs(th)@Id): 1.5V@250uA
  • Type: 1PCSPChannel
  • Input Capacitance (Ciss@Vds): 11.68nF@6V
  • Total Gate Charge (Qg@Vgs): [email protected]
  • Operating Temperature: -55℃~+175℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

Full Specifications of SQJ123ELP-T1_GE3

Model NumberSQJ123ELP-T1_GE3
Model NameVishay Intertech SQJ123ELP-T1_GE3
CategoryMOSFETs
BrandVishay Intertech
Description12V 238A 375W 4mΩ@10A,4.5V 1.5V@250uA 1PCSPChannel PowerPAK-SO-8 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CasePowerPAK-SO-8
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)12V
Continuous Drain Current (Id)238A
Power Dissipation (Pd)375W
Drain Source On Resistance (RDS(on)@Vgs,Id)4mΩ@10A,4.5V
Gate Threshold Voltage (Vgs(th)@Id)1.5V@250uA
Type1PCSPChannel
Input Capacitance (Ciss@Vds)11.68nF@6V
Total Gate Charge (Qg@Vgs)[email protected]
Operating Temperature-55℃~+175℃@(Tj)

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