SQJ136ELP-T1_GE3 by Vishay Intertech – Specifications

Vishay Intertech SQJ136ELP-T1_GE3 is a SQJ136ELP-T1_GE3 from Vishay Intertech, part of the MOSFETs. It is designed for 40V 350A 1.12mΩ@15A,10V 500W 2.2V@250uA 1PCSNChannel PowerPAK-SO-8 MOSFETs ROHS. This product comes in a PowerPAK-SO-8 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 40V
  • Continuous Drain Current (Id): 350A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 1.12mΩ@15A,10V
  • Power Dissipation (Pd): 500W
  • Gate Threshold Voltage (Vgs(th)@Id): 2.2V@250uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 8.015nF@25V
  • Total Gate Charge (Qg@Vgs): 150nC@10V
  • Operating Temperature: -55℃~+175℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

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Full Specifications of SQJ136ELP-T1_GE3

Model NumberSQJ136ELP-T1_GE3
Model NameVishay Intertech SQJ136ELP-T1_GE3
CategoryMOSFETs
BrandVishay Intertech
Description40V 350A 1.12mΩ@15A,10V 500W 2.2V@250uA 1PCSNChannel PowerPAK-SO-8 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CasePowerPAK-SO-8
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)40V
Continuous Drain Current (Id)350A
Drain Source On Resistance (RDS(on)@Vgs,Id)1.12mΩ@15A,10V
Power Dissipation (Pd)500W
Gate Threshold Voltage (Vgs(th)@Id)2.2V@250uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)8.015nF@25V
Total Gate Charge (Qg@Vgs)150nC@10V
Operating Temperature-55℃~+175℃@(Tj)

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