SQJ138EP-T1_GE3 by Vishay Intertech – Specifications

Vishay Intertech SQJ138EP-T1_GE3 is a SQJ138EP-T1_GE3 from Vishay Intertech, part of the MOSFETs. It is designed for 40V 330A 1.8mΩ@15A,10V 312W 3.5V@250uA 1PCSNChannel PowerPAK-SO-8 MOSFETs ROHS. This product comes in a PowerPAK-SO-8 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 40V
  • Continuous Drain Current (Id): 330A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 1.8mΩ@15A,10V
  • Power Dissipation (Pd): 312W
  • Gate Threshold Voltage (Vgs(th)@Id): 3.5V@250uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 4.715nF@25V
  • Total Gate Charge (Qg@Vgs): 81nC@10V
  • Operating Temperature: -55℃~+175℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.222 grams.

More on SQJ138EP-T1_GE3

Full Specifications of SQJ138EP-T1_GE3

Model NumberSQJ138EP-T1_GE3
Model NameVishay Intertech SQJ138EP-T1_GE3
CategoryMOSFETs
BrandVishay Intertech
Description40V 330A 1.8mΩ@15A,10V 312W 3.5V@250uA 1PCSNChannel PowerPAK-SO-8 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.222 grams / 0.007831 oz
Package / CasePowerPAK-SO-8
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)40V
Continuous Drain Current (Id)330A
Drain Source On Resistance (RDS(on)@Vgs,Id)1.8mΩ@15A,10V
Power Dissipation (Pd)312W
Gate Threshold Voltage (Vgs(th)@Id)3.5V@250uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)4.715nF@25V
Total Gate Charge (Qg@Vgs)81nC@10V
Operating Temperature-55℃~+175℃@(Tj)

Compare Vishay Intertech - SQJ138EP-T1_GE3 With Other 200 Models

Related Models - SQJ138EP-T1_GE3 Alternative

Scroll to Top