SQJ402EP-T1_GE3 by Vishay Intertech – Specifications

Vishay Intertech SQJ402EP-T1_GE3 is a SQJ402EP-T1_GE3 from Vishay Intertech, part of the MOSFETs. It is designed for 100V 32A 11mΩ@10V,10A 83W 2.5V@250uA 1PCSNChannel PowerPAK-SO-8 MOSFETs ROHS. This product comes in a PowerPAK-SO-8 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 100V
  • Continuous Drain Current (Id): 32A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 11mΩ@10V,10A
  • Power Dissipation (Pd): 83W
  • Gate Threshold Voltage (Vgs(th)@Id): 2.5V@250uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 2.289nF@40V
  • Total Gate Charge (Qg@Vgs): 51nC@10V
  • Operating Temperature: -55℃~+175℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.131 grams.

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Full Specifications of SQJ402EP-T1_GE3

Model NumberSQJ402EP-T1_GE3
Model NameVishay Intertech SQJ402EP-T1_GE3
CategoryMOSFETs
BrandVishay Intertech
Description100V 32A 11mΩ@10V,10A 83W 2.5V@250uA 1PCSNChannel PowerPAK-SO-8 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.131 grams / 0.004621 oz
Package / CasePowerPAK-SO-8
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)100V
Continuous Drain Current (Id)32A
Drain Source On Resistance (RDS(on)@Vgs,Id)11mΩ@10V,10A
Power Dissipation (Pd)83W
Gate Threshold Voltage (Vgs(th)@Id)2.5V@250uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)2.289nF@40V
Total Gate Charge (Qg@Vgs)51nC@10V
Operating Temperature-55℃~+175℃@(Tj)

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