SQJ412EP-T2_GE3 by Vishay Intertech – Specifications

Vishay Intertech SQJ412EP-T2_GE3 is a SQJ412EP-T2_GE3 from Vishay Intertech, part of the MOSFETs. It is designed for 40V 32A 83W 4.1mΩ@10.3A,10V 2.5V@250uA 1PCSNChannel PowerPAK-SO-8 MOSFETs ROHS. This product comes in a PowerPAK-SO-8 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 40V
  • Continuous Drain Current (Id): 32A
  • Power Dissipation (Pd): 83W
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 4.1mΩ@10.3A,10V
  • Gate Threshold Voltage (Vgs(th)@Id): 2.5V@250uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 5.95nF@20V
  • Total Gate Charge (Qg@Vgs): 120nC@10V
  • Operating Temperature: -55℃~+175℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

More on SQJ412EP-T2_GE3

Full Specifications of SQJ412EP-T2_GE3

Model NumberSQJ412EP-T2_GE3
Model NameVishay Intertech SQJ412EP-T2_GE3
CategoryMOSFETs
BrandVishay Intertech
Description40V 32A 83W 4.1mΩ@10.3A,10V 2.5V@250uA 1PCSNChannel PowerPAK-SO-8 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CasePowerPAK-SO-8
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)40V
Continuous Drain Current (Id)32A
Power Dissipation (Pd)83W
Drain Source On Resistance (RDS(on)@Vgs,Id)4.1mΩ@10.3A,10V
Gate Threshold Voltage (Vgs(th)@Id)2.5V@250uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)5.95nF@20V
Total Gate Charge (Qg@Vgs)120nC@10V
Operating Temperature-55℃~+175℃@(Tj)

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