SQJ422EP-T1_GE3 by Vishay Intertech – Specifications

Vishay Intertech SQJ422EP-T1_GE3 is a SQJ422EP-T1_GE3 from Vishay Intertech, part of the MOSFETs. It is designed for 40V 74A 83W 3.4mΩ@10V,18A 2.5V@250uA 1PCSNChannel PowerPAK-SO-8 MOSFETs ROHS. This product comes in a PowerPAK-SO-8 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 40V
  • Continuous Drain Current (Id): 74A
  • Power Dissipation (Pd): 83W
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 3.4mΩ@10V,18A
  • Gate Threshold Voltage (Vgs(th)@Id): 2.5V@250uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 4.66nF@20V
  • Total Gate Charge (Qg@Vgs): 100nC@10V
  • Operating Temperature: -55℃~+175℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.131 grams.

More on SQJ422EP-T1_GE3

Full Specifications of SQJ422EP-T1_GE3

Model NumberSQJ422EP-T1_GE3
Model NameVishay Intertech SQJ422EP-T1_GE3
CategoryMOSFETs
BrandVishay Intertech
Description40V 74A 83W 3.4mΩ@10V,18A 2.5V@250uA 1PCSNChannel PowerPAK-SO-8 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.131 grams / 0.004621 oz
Package / CasePowerPAK-SO-8
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)40V
Continuous Drain Current (Id)74A
Power Dissipation (Pd)83W
Drain Source On Resistance (RDS(on)@Vgs,Id)3.4mΩ@10V,18A
Gate Threshold Voltage (Vgs(th)@Id)2.5V@250uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)4.66nF@20V
Total Gate Charge (Qg@Vgs)100nC@10V
Operating Temperature-55℃~+175℃@(Tj)

Compare Vishay Intertech - SQJ422EP-T1_GE3 With Other 200 Models

Related Models - SQJ422EP-T1_GE3 Alternative

Scroll to Top